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TMCNet:  U.S. Patents Awarded to Inventors in New York (Jan. 5)

[January 05, 2013]

U.S. Patents Awarded to Inventors in New York (Jan. 5)

(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., Jan. 5 -- The following federal patents were awarded to inventors in New York.

*** Progenics Pharmaceuticals Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Progenics Pharmaceuticals, Tarrytown, N.Y., has been assigned a patent (8,343,992) developed by Harold D. Doshan, Riverside, Conn., and Julio Perez, Tarrytown, N.Y., for a synthesis of R-N-methylnaltrexone.



The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention relates to stereoselective synthesis of R-MNTX and intermediates thereof, pharmaceutical preparations comprising R-MNTX or intermediates thereof and methods for their use." The patent application was filed on Jan. 22, 2010 (12/692,083). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,992&OS=8,343,992&RS=8,343,992 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Angle Ion Implant to Re-shape Sidewall Image Transfer Patterns ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,877) developed by Kangguo Cheng, Albany, N.Y., Bruce B. Doris, Albany, N.Y., and Ying Zhang, Yorktown Heights, N.Y., for "angle ion implant to re-shape sidewall image transfer patterns." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for fabrication of features of an integrated circuit and device thereof include patterning a first structure on a surface of a semiconductor device and forming spacers about a periphery of the first structure. An angled ion implantation is applied to the device such that the spacers have protected portions and unprotected portions from the angled ion implantation wherein the unprotected portions have an etch rate greater than an etch rate of the protected portions. The unprotected portions and the first structure are selectively removed with respect to the protected portions. A layer below the protected portions of the spacer is patterned to form integrated circuit features." The patent application was filed on Nov. 9, 2009 (12/614,952). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,877&OS=8,343,877&RS=8,343,877 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Merck Sharp & Dohme Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Merck Sharp & Dohme, Rahway, N.J., has been assigned a patent (8,343,990) developed by four co-inventors for "substituted cyclopropyl compounds, compositions containing such compounds and methods of treatment." The co-inventors are Harold B. Wood, Westfield, N.J., Jason W. Szewczyk, New York, Yong Huang, Colonia, N.J., and Alan D. Adams, Cranford, N.J.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Substituted cyclopropyl compounds of formula (I) are disclosed as useful for treating or preventing type 2 diabetes and similar conditions. Pharmaceutically acceptable salts and solvates are included as well. The compounds are useful as agonists of the g-protein coupled receptor GPR-119. ##STR00001##" The patent application was filed on March 26, 2009 (12/936,313). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,990&OS=8,343,990&RS=8,343,990 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Enzo Biochem Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Enzo Biochem, Farmingdale, N.Y., has been assigned a patent (8,343,922) developed by five co-inventors for "compositions and methods for the stimulation or enhancement of bone formation and the self-renewal of cells." The co-inventors are Dianqing Wu, Chesire, Conn., Xiaofeng Li, West Hartford, Conn., Peng Liu, West Hartford, Conn., Wenzhong Liu, Farmington, Conn., and Dean Engelhardt, New York.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compositions and methods for the treatment of bone diseases, bone fractures, bone injuries and other bone abnormalities involving the use of Dkk protein, a Wnt antagonist, a Wnt inhibitor, or any other related protein for the stimulation or enhancement of mineralization and for stimulating the renewal of cells. One Dkk protein, Dickkopf-2 (Dkk-2), acts to stimulate bone formation independently of Wnt proteins which may be inhibited and/or antagonized by Dkk-2. Dkk-2 displayed enhanced specific targeting ability and enhanced biological activity in stimulating or enhancing mineralization. Dkk-2 also played a role in the differentiation and self-renewal of hematopoietic stem cells and mesenchymal stem cells, particularly in osteoblastogenesis and osteoclastogenesis." The patent application was filed on May 19, 2004 (10/849,643). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,922&OS=8,343,922&RS=8,343,922 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,839) developed by four co-inventors for a "scaled equivalent oxide thickness for field effect transistor devices." The co-inventors are Takashi Ando, Tuckahoe, N.Y., Changhwan Choi, Seoul, South Korea, Unoh Kwon, Fishkill, N.Y., and Vijay Narayanan, New York.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device." The patent application was filed on May 27, 2010 (12/788,454). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,839&OS=8,343,839&RS=8,343,839 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Electrical Mask Inspection ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,781) developed by Arvind Kumar, Hopewell Junction, N.Y,, Anthony I-Chih Chou, Hopewell Junction, N.Y., and Shreesh Narasimha, Hopewell Junction, N.Y., for electrical mask inspection.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain." The patent application was filed on Sept. 21, 2010 (12/886,612). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,781&OS=8,343,781&RS=8,343,781 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Biosource Pharm Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Biosource Pharm, Spring Valley, N.Y., has been assigned a patent (8,343,912) developed by Richard A. Leese, Suffern, N.Y., for "antibiotic compositions for the treatment of gram negative infections." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Provided herein is an antibacterial compound of the following formula: ##STR00001## or a pharmaceutically acceptable salt thereof. The antibacterial compound has antibacterial properties against a diverse range of gram negative bacteria and reduced toxicity compared to polymyxins such as polymyxin B. Also provided are antibacterial pharmaceutical compositions containing the antibacterial compound, as well as methods for preparing the antibacterial compound." The patent application was filed on Dec. 22, 2009 (12/644,943). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,912&OS=8,343,912&RS=8,343,912 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Device and Methodology for Reducing Effective Dielectric Constant in Semiconductor Devices ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,868) developed by 16 co-inventors for a "device and methodology for reducing effective dielectric constant in semiconductor devices." The co-inventors are Daniel C. Edelstein, White Plains, N.Y., Matthew E. Colburn, Hopewell Junction, N.Y., Edward C. Cooney III, Jericho, Vt., Timothy J. Dalton, Ridgefield, Conn., John A. Fitzsimmons, Poughkeepsie, N.Y., Jeffrey P. Gambino, Westford, Vt., Elbert E. Huang, Tarrytown, N.Y., Michael W. Lane, Cortlandt Manor, N.Y., Vincent J. McGahay, Poughkeepsie, N.Y., Lee M. Nicholson, Katonah, N.Y., Satyanarayana V. Nitta, Poughquag, N.Y., Sampath Purushothaman, Yorktown Heights, N.Y., Sujatha Sankaran, Wappingers Falls, N.Y., Thomas M. Shaw, Peekskill, N.Y., Andrew H. Simon, Fishkill, N.Y., and Anthony K. Stamper, Williston, Vt.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Method of manufacturing a structure which includes the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the plurality of interconnects." The patent application was filed on Jan. 12, 2011 (13/005,201). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,868&OS=8,343,868&RS=8,343,868 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Method of Reducing Dislocation-induced Leakage in a Strained-layer Field-effect Transistor by Implanting Blocking Impurity into the Strained-layer ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,838) developed by Steven J. Koester, Ossining, N.Y., for a "method of reducing dislocation-induced leakage in a strained-layer field-effect transistor by implanting blocking impurity into the strained-layer." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A structure and method of fabricating a semiconductor field-effect transistor (MOSFET) such as a strained Si n-MOSFET where dislocation or crystal defects spanning from source to drain is partially occupied by heavy p-type dopants. Preferably, the strained-layer n-MOSFET includes a Si, SiGe or SiGeC multi-layer structure having, in the region between source and drain, impurity atoms that preferentially occupy the dislocation sites so as to prevent shorting of source and drain via dopant diffusion along the dislocation. Advantageously, devices formed as a result of the invention are immune to dislocation-related failures, and therefore are more robust to processing and material variations. The invention thus relaxes the requirement for reducing the threading dislocation density in SiGe buffers, since the devices will be operable despite the presence of a finite number of dislocations." The patent application was filed on Aug. 11, 2009 (12/539,235). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,838&OS=8,343,838&RS=8,343,838 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Extremely Thin Semiconductor-on-insulator (ETSOI) Integrated Circuit with On-chip Resistors and Method of Forming the Same ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,819) developed by four co-inventors for an "extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same." The co-inventors are Bruce B. Doris, Yorktown Heights, N.Y., Kangguo Cheng, Albany, N.Y., Ali Khakifirooz, Albany, N.Y., and Ghavam G. Shahidi, Yorktown Heights, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An electrical device is provided that in one embodiment includes a semiconductor-on-insulator (SOI) substrate having a semiconductor layer with a thickness of less than 10 nm. A semiconductor device having a raised source region and a raised drain region of a single crystal semiconductor material of a first conductivity is present on a first surface of the semiconductor layer. A resistor composed of the single crystal semiconductor material of the first conductivity is present on a second surface of the semiconductor layer. A method of forming the aforementioned electrical device is also provided." The patent application was filed on Jan. 14, 2010 (12/687,273). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,819&OS=8,343,819&RS=8,343,819 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Implementing Multiple Different Types of Dies for Memory Stacking ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,804) developed by Paul W. Coteus, Yorktown, N.Y., and Kyu-hyoun Kim, Mount Kisco, N.Y., for "implementing multiple different types of dies for memory stacking." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer." The patent application was filed on Feb. 2, 2012 (13/364,346). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,804&OS=8,343,804&RS=8,343,804 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** ELC Management Assigned Patent ALEXANDRIA, Va., Jan. 5 -- ELC Management, New York, has been assigned a patent (8,344,024) developed by four co-inventors for "anhydrous cosmetic compositions containing resveratrol derivatives." The co-inventors are Anna Czarnota, Huntington, N.Y., Lisa Qu, Flushing, N.Y., Fatemeh Mohammadi, Hauppauge, N.Y., and Julius R. Zecchino, New York.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "An anhydrous color cosmetic composition comprising at least one resveratrol derivative and particulates; and an anhydrous emulsion skin care composition." The patent application was filed on May 27, 2008 (12/127,455). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,344,024&OS=8,344,024&RS=8,344,024 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** State University of New Jersey, University of Medicine and Dentistry of New Jersey, Lehigh University Assigned Patent ALEXANDRIA, Va., Jan. 5 --State University of New Jersey, New Brunswick, N.J., the University of Medicine and Dentistry of New Jersey, Somerset, N.J., and Lehigh University, Bethlehem, Pa., have been assigned a patent (8,343,971) developed by four co-inventors for "pharmacologically-active vanilloid carbamates." The co-inventors are Jeffrey D. Laskin, Piscataway, N.J., Diane E. Heck, Rumson, N.J., Carl Jeffrey Lacey, Schnecksville, Pa., Erik Aponte, Pine Bush, N.Y., Mou-Tuan Huang, Englewood Cliffs, N.J., and Ned D. Heindel, Easton, Pa.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "This application relates to pharmacologically-active vanilloid compounds which are useful for the treatment of various anti-inflammatory states characterized by inhibition of FAAH, such as, Alzheimer's dementia, Parkinson's disease, depression, pain, rheumatoid arthritis, pathophysiology of mood disorders, multiple sclerosis, and inflammation, or antagonism of TRPV1, such as, for example, Huntington's disease, hypertension, arthritis, allergic airway inflammation, Crohn's disease, ulcerative colitis, and neuropathic pain." The patent application was filed on Sept. 15, 2010 (12/882,351). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,971&OS=8,343,971&RS=8,343,971 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Wyeth LLC Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Wyeth LLC, Madison, N.J., has been assigned a patent (8,343,965) developed by five co-inventors for "compositions containing micronized tanaproget prepared by wet granulation." The co-inventors are Arwinder S. Nagi, Thiells, N.Y., Ramarao Chatlapalli, Hopewell Junction, N.Y., Shamim Hasan, East Elmhurst, N.Y., Rolland W. Carson, Middletown, N.Y., and Mohamed Ghorab, Edison, N.J.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compositions, preferably pharmaceutical compositions, containing micronized tanaproget, or pharmaceutically acceptable salt thereof, microcrystalline cellulose, croscarmellose sodium, sodium lauryl sulfate, butylated hydroxyanisole, povidone, and magnesium stearate, are provided. The compositions are useful in contraception and hormone replacement therapy and in the treatment and/or prevention of uterine myometrial fibroids, benign prostatic hypertrophy, benign and malignant neoplastic disease, dysfunctional bleeding, uterine leiomyomata, endometriosis, polycystic ovary syndrome, and carcinomas and adenocarcinomas of the pituitary, endometrium, kidney, ovary, breast, colon, and prostate and other hormone-dependent tumors, and in the preparation of medicaments useful therefor. Additional uses include stimulation of food intake." The patent application was filed on April 26, 2006 (11/412,014). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,965&OS=8,343,965&RS=8,343,965 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for DRAM with Schottky Barrier FET and MIM Trench Capacitor ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,864) developed by four co-inventors for a "DRAM with schottky barrier FET and MIM trench capacitor." The co-inventors are Puneet Goyal, Bangalore, India, Herbert Lei Ho, Hopewell Junction, N.Y., Pradeep Jana, Bangalore, India, and Jin Liu, Chappaqua, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor circuit and method of fabrication is disclosed. In one embodiment, the semiconductor circuit comprises a metal-insulator-metal trench capacitor in a silicon substrate. A field effect transistor is disposed on the silicon substrate adjacent to the metal-insulator-metal trench capacitor, and a silicide region is disposed between the field effect transistor and the metal-insulator-metal trench capacitor. Electrical connectivity between the transistor and capacitor is achieved without the need for a buried strap." The patent application was filed on March 28, 2001 (13/073,103). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,864&OS=8,343,864&RS=8,343,864 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Method for Forming Retrograded Well for MOSFET ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,818) developed by four co-inventors for a "method for forming retrograded well for MOSFET." The co-inventors are Huilong Zhu, Poughkeepsie, N.Y., Zhijiong Luo, Beijing, Qingqing Liang, Lagrangeville, N.Y., and Haizhou Yin, Poughkeepsie, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming an electrical device is provided that includes forming at least one semiconductor device on a first semiconductor layer of the SOI substrate. A handling structure is formed contacting the at least one semiconductor device and the first semiconductor layer. A second semiconductor layer and at least a portion of the dielectric layer of the SOI substrate are removed to provide a substantially exposed surface of the first semiconductor layer. A retrograded well may be formed by implanting dopant through the substantially exposed surface of the first semiconductor layer into a first thickness of the semiconductor layer that extends from the substantially exposed surface of the semiconductor layer, wherein a remaining thickness of the semiconductor layer is substantially free of the retrograded well dopant. The retrograded well may be laser annealed." The patent application was filed on Jan. 14, 2010 (12/687,287). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,818&OS=8,343,818&RS=8,343,818 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Air Liquide Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Air Liquide, Paris, and American Air Liquide, Houston, have been assigned a patent (8,343,860) developed by four co-inventors for "high C content molecules for C implant." The co-inventors are Vincent M. Omarjee, Albany, N.Y., Christian Dussarrat, Wilmington, Del., Jean-Marc Girard, Tokyo, and Nicolas Blasco, Grenoble, France.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods." The patent application was filed on March 4, 2011 (13/041,127). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,860&OS=8,343,860&RS=8,343,860 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** Hoffmann-La Roche Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Hoffmann-La Roche, Nutley, N.J., has been assigned a patent (8,344,027) developed by six co-inventors for "4-dimethylaminobutyric acid derivatives." The co-inventors are Mirjana Andjelkovic, Basel, Switzerland, Simona M. Ceccarelli, Basel, Switzerland, Odile Chomienne, Altkirch, France, Gerald Lewis Kaplan, New York, Patrizio Mattei, Riehen, Switzerland, and Jefferson Wright Tilley, North Caldwell, N.J.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention relates to novel 4-dimethylaminobutyric acid derivatives of the formula ##STR00001## wherein A.sup.1, A.sup.2, R.sup.1, m and n are as defined in the description and in the claims, as well as pharmaceutically acceptable salts thereof. These compounds inhibit carnitine palmitoyl transferase (CPT) activity, in particular CPT2 activity, and can be used as medicaments in methods for the treatment of diseases modulated by CPT2 inhibitors." The patent application was filed on April 28, 2009 (12/430,934). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,344,027&OS=8,344,027&RS=8,344,027 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for Reducing Dislocation Formation in Semiconductor Devices Through Targeted Carbon Implantation ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,825) developed by five co-inventors for a "reducing dislocation formation in semiconductor devices through targeted carbon implantation." The co-inventors are Anthony G. Domenicucci, New Paltz, N.Y., Shreesh Narasimha, Beacon, N.Y., Karen A. Nummy, Newburgh, N.Y., Viorel C. Ontalus, Danbury, Conn., and Yun-Yu Wang, Poughquag, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail." The patent application was filed on Jan. 19, 2011 (13/009,020). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,825&OS=8,343,825&RS=8,343,825 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for TFET with Nanowire Source ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,815) developed by four co-inventors for a "TFET with nanowire source." The co-inventors are Sarunya Bangsaruntip, Mount Kisco, N.Y., Isaac Lauer, Mahopac, N.Y., Amlan Majumdar, White Plains, N.Y., and Jeffrey Sleight, Ridgefield, Conn.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region." The patent application was filed on May 11, 2010 (12/777,881). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,815&OS=8,343,815&RS=8,343,815 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** International Business Machines Assigned Patent for N-type Carrier Enhancement in Semiconductors ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,343,863) developed by four co-inventors for "N-type carrier enhancement in semiconductors." The co-inventors are Jee Hwan Kim, White Plains, N.Y., Stephen W. Bedell, Wappingers Falls, N.Y., Siegfried Maurer, Stormville, N.Y., and Devendra K. Sadana, Pleasantville, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached." The patent application was filed on Jan. 25, 2012 (13/357,656). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,343,863&OS=8,343,863&RS=8,343,863 Written by Satyaban Rath; edited by Hemanta Panigrahi.

*** MKS Instruments Assigned Patent ALEXANDRIA, Va., Jan. 5 -- MKS Instruments, Andover, Mass., has been assigned a patent (8,344,801) developed by Christopher Michael Owen, Pittsford, N.Y., and Yogendra K. Chawla, Fairport, N.Y., for a "variable class characteristic amplifier." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A power amplifier (PA) adjustably operable between two classes of operation. The range of operation lies in a range of operation between a conventional, linear, conjugately matched Class AB characteristic amplifier and a higher efficiency switching Class E characteristic amplifier. A circuit topology having a push-pull configuration that allows a Class E characteristic of operation." The patent application was filed on April 20, 2010 (12/763,640). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,344,801.PN.&OS=PN/8,344,801&RS=PN/8,344,801 Written by Kusum Sangma; edited by Anand Kumar.

*** International Business Machines Assigned Patent ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,344,906) developed by four co-inventors for an automated traffic synchronization. The co-inventors are Ossama Emam, Giza, Egypt, Peter G. Fairweather, Yorktown Heights, N.Y., Dimitri Kanevsky, Ossining, N.Y., and Irina Rish, Rye Brook, N.Y.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Spatial relationship information and performance information are determined for vehicles within a vehicular environment. Traffic signaling information is received from a traffic regulation system associated with the vehicular environment. At least one synchronized control action is calculated for each of the vehicles to synchronize the vehicles with the traffic regulation system based upon the traffic signaling information, the determined spatial relationship information, and the determined performance information for each of the vehicles. The associated at least one synchronized control action is communicated to each of the vehicles. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract." The patent application was filed on Sept. 8, 2008 (12/206,507). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,344,906.PN.&OS=PN/8,344,906&RS=PN/8,344,906 Written by Kusum Sangma; edited by Anand Kumar.

*** Xerox Assigned Patent ALEXANDRIA, Va., Jan. 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,344,892) developed by Arturo M. Lorenzo, Fairport, N.Y., Hua Liu, Fairport, N.Y., and Naveen Sharma, Fairport, N.Y., for a "personalization of event participation in mobile neighborhoods." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Embodiments described herein are directed to personalizing event participation of a visitor at an event. Embodiments include communication nodes that form defined wireless areas. A first one of the communication nodes determines when the visitor enters a first defined wireless area in response to detecting an identifier associated with the personal portable wireless device associated with the visitor, records user activities of the visitor within the first one of defined wireless areas, and determines an interest of the visitor in response to the user activities in the first defined wireless area, where the interest is used to customize the event for the visitor." The patent application was filed on Sept. 9, 2009 (12/556,106). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,344,892.PN.&OS=PN/8,344,892&RS=PN/8,344,892 Written by Kusum Sangma; edited by Anand Kumar.

*** International Business Machines Assigned Patent for Self-calibrated, Broadband, Tunable, Active Filter with Unity Gain Cells for Multi-standard and/or Multiband Channel Selection ALEXANDRIA, Va., Jan. 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,344,795) developed by Mihai Sanduleanu, Yorktown Heights, N.Y., and Ping-Yu Chen, Hsinchu, Taiwan, for a "self-calibrated, broadband, tunable, active filter with unity gain cells for multi-standard and/or multiband channel selection." The abstract of the patent published by the U.S. Patent and Trademark Office states: "An exemplary filter includes N (.gtoreq.2) unity gain amplifiers, each with a pair of differential input terminals and a pair of differential output terminals; a pair of filter differential input terminals; a first pair of variable resistances coupling the pair of filter differential input terminals to the pair of differential input terminals of the first unity gain amplifier; N-1 pairs of variable resistances coupling the pairs of differential output terminals of each of the N unity gain amplifiers, other than the last one, to the pairs of differential input terminals of its downstream neighbor; N-1 pairs of variable capacitances coupling the pairs of differential input terminals of each of the N unity gain amplifiers, other than the last one, to the pairs of differential output terminals of its downstream neighbor; and a variable capacitance coupling the pair of differential input terminals of the last unity gain amplifier to each other." The patent application was filed on Jan. 20, 2011 (13/010,249). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,344,795.PN.&OS=PN/8,344,795&RS=PN/8,344,795 Written by Kusum Sangma; edited by Anand Kumar.

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